The FCX1151A is a high-voltage NPN silicon planar epitaxial transistor from Zetex Semiconductors. It is designed for high-voltage applications requiring low saturation voltage and fast switching speeds. This transistor is typically available in a SOT-89 package.

Applications:

• High-voltage inverters
• DC-DC converters
• Power supplies
• Relay drivers
• Hammer drivers
• Line drivers

Features:

• High Collector-Emitter Breakdown Voltage: VCEO = 300V
• Low Saturation Voltage: VCE(sat) = 0.5V at 50mA
• Fast Switching Speeds
• High Current Gain: hFE = 40 (typical) at IC = 10mA
• SOT-89 package

Benefits:

• Enables efficient high-voltage switching
• Reduces power dissipation due to low saturation voltage
• Suitable for high-frequency applications due to fast switching speeds
• Simplifies circuit design with high current gain
• Compact design with SOT-89 packaging

Additional Details:

The FCX1151A features a collector-base voltage (VCBO) of 300V and an emitter-base voltage (VEBO) of 6V. It has a continuous collector current (IC) rating of 500mA, and a peak collector current (ICM) of 1A. The power dissipation (Ptot) is 1W. The operating and storage junction temperature range is -55°C to +150°C.

This transistor is designed for through-hole mounting. It is RoHS compliant.