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AOD2N60A

Part No AOD2N60A
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 295pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 4.7 Ohm @ 1A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1016917-AOD2N60A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOD2N60A CAD Model

Description

The Alpha & Omega Semiconductor Inc. 1016917-AOD2N60A is an N-channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 2A @ 25°C.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 2A
  • Maximum Rds On: 4.7 Ohm @ 1A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 11nC @ 10V
  • Power Dissipation: 57W (Tc)
  • Application: Discrete Semiconductor Products
  • Drive Voltage: 10V
  • Mounting: SMD (SMT)
  • Package: TO-252, (D-Pak)
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature: -50°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand: Sufficient

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