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NVR1P02T1G

Part No NVR1P02T1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1A SOT-23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 2.5nC @ 5V
Max Input Capacitance 165pF @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 400mW (Ta)
Maximum Rds On at Id,Vgs 180 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1084142-NVR1P02T1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NVR1P02T1G CAD Model

Description

ON Semiconductor NVR1P02T1G P-Channel MOSFET

The ON Semiconductor NVR1P02T1G is a high-performance, P-Channel MOSFET that offers efficient power management for a wide variety of applications. This semiconductor device is designed to handle significant levels of power and voltage, making it an ideal choice for designers looking to enhance the efficiency and reliability of their electronic circuits.

Key Features:

  • Low Threshold Voltage: The NVR1P02T1G comes with a low threshold voltage, ensuring it can be easily driven by logic-level voltages, which is particularly useful for battery-operated devices and low-voltage applications.
  • High Power Dissipation: With a high power dissipation capability, this MOSFET can handle higher currents and dissipate heat effectively, which is crucial for maintaining stability and performance in demanding situations.
  • Small Footprint: The device is packaged in a compact SOT-23 package, which saves valuable board space without compromising on power handling or thermal performance.
  • RoHS Compliant: Adhering to environmental standards, the NVR1P02T1G is RoHS compliant, making it suitable for use in a wide range of consumer electronics that require compliance with environmental regulations.

Applications:

The versatility of the NVR1P02T1G allows it to be used in numerous applications, including but not limited to:

  • Load/Power Switching
  • Battery Management Systems
  • Power Management for Portable Devices
  • DC/DC Converters
  • Motor Control Circuits

Technical Specifications:

The NVR1P02T1G boasts impressive technical specifications that make it a robust choice for various electronic designs:

  • Drain-Source Voltage (Vdss): -20V
  • Current - Continuous Drain (Id) @ 25°C: -540mA
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ -250mA, -4.5V
  • Gate-Source Voltage (Vgs): ±8V
  • Operating Temperature Range: -55°C to 150°C

With its excellent performance characteristics and compact size, the ON Semiconductor NVR1P02T1G P-Channel MOSFET is a reliable and efficient solution for designers looking to improve their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2031 $50.7750
600+ $0.1667 $100.0200
930+ $0.1615 $150.1950
1,280+ $0.1563 $200.0640
1,660+ $0.1510 $250.6600
2,220+ $0.1354 $300.5880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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