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Same model may have multiple batches, images only for reference.
AON7900 Real Image
Same model may have multiple batches, images only for reference.

AON7900

Part No AON7900
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A/13A 8DFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A, 13A
Maximum Rds On at Id,Vgs 21 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 710pF @ 15V
Maximum Power Dissipation 1.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-DFN-EP (3.3x3.3)
Win Source Part Number 1017158-AON7900
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AON7900 CAD Model

Description

The Alpha & Omega Semiconductor Inc. FET is a 2 N-Channel (Half Bridge) transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 8A, 13A at 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 8A, 13A
  • Maximum Power Dissipation: 1.8W
  • Maximum Rds On: 21 mOhm @ 8A, 10V
  • Mounting: Reel
  • Package: 8-DFN-EP (3.3x3.3)
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 2.3V @ 250μA
  • Maximum Input Capacitance: 710pF @ 15V
  • Suitable for: Discrete semiconductor products and power electronics
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
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