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Same model may have multiple batches, images only for reference.
AOTF7N60FD Real Image
Same model may have multiple batches, images only for reference.

AOTF7N60FD

Part No AOTF7N60FD
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A TO220F
Datasheet
AOTF7N60FD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.2V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 995pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 39W (Tc)
Maximum Rds On at Id,Vgs 1.45 Ohm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Win Source Part Number 1017286-AOTF7N60FD
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOTF7N60FD CAD Model

Description

The Alpha & Omega Semiconductor AOTF7N60FD is an N-channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 7A at 25°C.

  • Maximum Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 7A @ 25°C
  • Maximum Rds On: 1.45 Ohm @ 3.5A and 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 4.2V @ 250μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 995pF @ 25V
  • Power Dissipation: 39W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-220-3F
  • Suitable for: discrete semiconductor products

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Quantity Unit Price Ext. Price
235+ $0.2147 $50.4545
570+ $0.1762 $100.4340
880+ $0.1707 $150.2160
1,215+ $0.1652 $200.7180
1,570+ $0.1597 $250.7290
2,100+ $0.1431 $300.5100
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Availability: 24,000 pieces
MOQ: 235 pcs
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