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C3M0280090D

Part No C3M0280090D
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 900V 11.5A TO247-3  /  N-Channel 900 V 11.5A (Tc) 54W (Tc) Through Hole TO-247-3
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Wolfspeed, Inc.
Series C3M™
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 360mOhm @ 7.5A, 15V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 15 V
Vgs (Max) +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 600 V
Power Dissipation (Max) 54W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number C3M0280090
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1050837-C3M0280090D
Ultra Librarian 3D Model Ultra Librarian C3M0280090D CAD Model

Description

The Wolfspeed, Inc. C3M™ SiCFET transistor with manufacturer part number 1050837-C3M0280090D is a through-hole device with an N-channel FET type.

  • Drain-to-Source Voltage (Vdss): 900 V
  • Current-Continuous Drain (Id) @ 25°C: 11.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
  • Power Dissipation (Max): 54W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
  • Gate-Source Voltage (Vgs): +18V, -8V
  • Temperature Range for Operating: -55°C ~ 150°C (TJ)
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.29.0095
  • Drive Voltage (Max Rds On, Min Rds On): 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.9639 $59.6390
21+ $5.5791 $117.1611
33+ $5.3868 $177.7644
47+ $5.0020 $235.0940
61+ $4.8097 $293.3917
76+ $4.6172 $350.9072
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Availability: 50 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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