The 2N7002VA-7-F is a high-efficiency, N-Channel MOSFET designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This compact and robust MOSFET is a testament to Diodes Incorporated's commitment to providing advanced electronic components that meet the diverse needs of modern electronic circuits.

Key Features

• Device Type: N-Channel MOSFET
• Package: SOT-23, a small and surface-mountable form factor that is ideal for space-constrained applications.
• Drain-Source Voltage (V_DS): 60V, providing a good balance between high voltage capacity and efficiency.
• Continuous Drain Current (I_D): 115mA, suitable for a variety of low to medium power applications.
• R_DS(on): 7.5Ω at V_GS = 10V, ensuring low on-state resistance for better performance and lower power loss.
• Fast Switching Speed: The MOSFET is designed for fast switching applications, which is essential for high-frequency power converters and other demanding environments.
• RoHS Compliant: The product meets the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly and suitable for use in a wide range of markets.

Applications

The 2N7002VA-7-F is versatile and can be used in various electronic circuits. Its applications include:

• Power Management
• Load Switch
• DC/DC Converters
• Battery Management Systems
• Motor Control Circuits
• Switching Circuits

Quality and Reliability

Diodes Incorporated ensures that all their products, including the 2N7002VA-7-F, meet the highest standards of quality and reliability. Customers can trust this MOSFET to deliver consistent performance and durability in their electronic designs.

Ordering Information

This product is available in a tape and reel format, with the "-7-F" suffix indicating the packing method suitable for automated assembly processes. For detailed ordering and shipping information, customers should consult Diodes Incorporated's official distribution channels or customer service representatives.