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BSS8402DW-7-F

Part No BSS8402DW-7-F
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N/P-CH 60V/50V 0.115A/0.13A 6-Pin SOT-363 T/R / MOSFET N/P-CH 60V/50V SC70-6
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V, 50V
Continuous Drain Current at 25°C 115mA, 130mA
Maximum Rds On at Id,Vgs 7.5 Ohm @ 50mA, 5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Power Dissipation 200mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 012163-BSS8402DW-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name BSS8402DW
Introduction Date September 23, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian BSS8402DW-7-F CAD Model

Description

Introducing the BSS8402DW-7-F Dual N-Channel MOSFET by Diodes Incorporated

The BSS8402DW-7-F is a high-performance, dual N-Channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete and analog semiconductor markets. This product is engineered to meet the stringent requirements of modern electronic devices, providing efficient power management and signal processing capabilities.

Constructed with advanced trench MOSFET technology, the BSS8402DW-7-F offers low on-resistance and a high continuous drain current. This makes it an ideal choice for a range of applications, including load switch, power management, and battery protection circuits in portable and battery-powered devices. Its dual N-Channel configuration facilitates compact designs by allowing two separate MOSFETs to be incorporated into a single package, thus saving valuable board space and reducing overall component count.

Key features of the BSS8402DW-7-F include:

  • Low On-Resistance: This characteristic minimizes conduction losses, thereby enhancing overall efficiency and performance in electronic circuits.
  • High-Speed Switching: The device is capable of fast switching speeds, which is crucial for applications requiring high-frequency operation.
  • Dual N-Channel Configuration: The integration of two N-Channel MOSFETs in one package allows for design flexibility and space-saving on PCBs.
  • Power Management: With its excellent power handling capabilities, the BSS8402DW-7-F is suitable for sophisticated power management systems.
  • Halogen and Lead-Free: The product is environmentally friendly, complying with RoHS standards, which restrict the use of hazardous substances in electronic equipment.

The BSS8402DW-7-F comes in a compact SOT-363 package, offering excellent thermal performance and is designed for easy integration into a wide variety of circuit designs. Its built-in ESD protection enhances the reliability and longevity of both the MOSFET and the devices it is used within.

Whether you are designing power supplies, battery chargers, or other sensitive electronic applications, the BSS8402DW-7-F from Diodes Incorporated provides the performance, efficiency, and reliability needed to meet the challenges of today's electronic industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1188 $50.4900
900+ $0.1113 $100.1700
1,395+ $0.1076 $150.1020
2,000+ $0.1000 $200.0000
2,600+ $0.0963 $250.3800
3,245+ $0.0925 $300.1625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 260,000 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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