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DMG4712SSS-13

Part No DMG4712SSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11.2A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Cut Reel
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 45.7nC @ 10V
Max Input Capacitance 2296pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 1.55W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 11.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 101632-DMG4712SSS-13
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian DMG4712SSS-13 CAD Model

Description

Diodes Incorporated DMG4712SSS-13 N-Channel Enhancement Mode MOSFET

The DMG4712SSS-13 is a high-performance, N-Channel enhancement mode MOSFET produced by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficient power management and is ideal for a wide range of applications, including but not limited to, power supply, battery management, and load switch circuits.

Constructed with advanced trench MOSFET technology, the DMG4712SSS-13 offers low on-resistance and a high continuous drain current. This makes it an excellent choice for applications requiring high efficiency and power density. The device is housed in a compact SOT-363 package, which not only saves valuable board space but also ensures a low thermal resistance path for heat dissipation.

Key Features:

  • Low On-Resistance (R<sub>DS(on)): The device offers very low on-resistance, which results in minimal power loss and improved overall efficiency.
  • High Continuous Drain Current (I<sub>D): It is capable of supporting a high continuous drain current, making it suitable for high-power applications.
  • High-Speed Switching: The DMG4712SSS-13 is optimized for fast switching, reducing transition losses and improving performance in switching applications.
  • Thermal Management: The SOT-363 package enhances thermal performance, ensuring reliability even under high power and temperature conditions.
  • Gate Charge (Q<sub>G): The MOSFET has a low total gate charge, which contributes to its high-speed switching capabilities.
  • RoHS Compliant: The product is compliant with RoHS standards, making it environmentally friendly and suitable for use in various regions with strict environmental regulations.

The DMG4712SSS-13 is not just a testament to Diodes Incorporated's commitment to quality, but also an embodiment of modern MOSFET design that meets the demands of contemporary electronic circuits. Whether you are designing power conversion systems, motor controls, or any application that requires efficient power handling and switching, the DMG4712SSS-13 offers a reliable and high-performance solution.

With its combination of low on-resistance, high drain current, and fast switching speeds, the DMG4712SSS-13 stands out as a superior choice for designers looking to optimize their power management systems for both performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.3009 $58.6755
470+ $0.2469 $116.0430
725+ $0.2392 $173.4200
1,000+ $0.2315 $231.5000
1,290+ $0.2238 $288.7020
1,730+ $0.2007 $347.2110
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,400 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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