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DMN2230U-7

Part No DMN2230U-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Input Capacitance 188pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 600mW (Ta)
Maximum Rds On at Id,Vgs 110 mOhm @ 2.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 014420-DMN2230U-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN2230U-7 CAD Model

Description

Product Overview: DMN2230U-7 - N-Channel Enhancement Mode Field Effect Transistor

The DMN2230U-7 from Diodes Incorporated is a high-performance, N-Channel enhancement mode field effect transistor (MOSFET) designed for use in a variety of applications. This compact and efficient MOSFET is part of Diodes Incorporated's extensive range of discrete, logic, and analog semiconductor components, offering designers a reliable and cost-effective solution for their circuit needs.

Key Features

  • Low On-Resistance: The DMN2230U-7 boasts an exceptionally low on-resistance (R<sub>DS(on)), which improves efficiency and reduces power losses during operation.
  • High-Speed Switching: Engineered for fast switching applications, this MOSFET enables quick transitions between on and off states, enhancing overall performance in high-speed circuits.
  • Low Threshold Voltage: With a low gate threshold voltage (V<sub>GS(th)), this device can be easily driven by low-voltage logic signals, making it suitable for interfacing with microcontrollers and other digital circuits.
  • Surface Mount Package: The DMN2230U-7 comes in an ultra-small SOT-23 package, which is ideal for space-constrained applications and helps in achieving high-density PCB layouts.
  • Lead-Free and RoHS Compliant: Compliant with current environmental standards, this product is lead-free and meets the requirements of the RoHS directive, ensuring it is suitable for use in green electronics.

Applications

The versatility of the DMN2230U-7 allows it to be used in a wide range of applications, including but not limited to:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Powered Devices
  • Load/Power Switches
  • Motor Control Systems
  • Portable Electronic Devices

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The DMN2230U-7 is manufactured with stringent quality control processes, ensuring reliable performance and longevity in the field. Customers can trust in the consistent quality and performance of Diodes Incorporated's products for their electronic designs.

Overall, the DMN2230U-7 N-Channel MOSFET is an excellent choice for designers looking for a small, efficient, and reliable component capable of handling high-speed switching and power management tasks in various electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
415+ $0.1206 $50.0490
890+ $0.1129 $100.4810
1,380+ $0.1090 $150.4200
1,980+ $0.1012 $200.3760
2,570+ $0.0973 $250.0610
3,215+ $0.0934 $300.2810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,593,000 pieces
MOQ: 415 pcs
Order Increment : 1 pcs
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