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DMN6040SE-13

Part No DMN6040SE-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 41V 60V SOT223 T&R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1287 pF @ 25 V
Power Dissipation (Max) 1.2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3
Package / Case TO-261-4, TO-261AA
Base Product Number DMN6040
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 802081-DMN6040SE-13
Ultra Librarian 3D Model Ultra Librarian DMN6040SE-13 CAD Model

Description

DMN6040SE-13 - N-Channel Enhancement Mode Field Effect Transistor

The DMN6040SE-13 from Diodes Incorporated is a high-performance, N-Channel enhancement mode field effect transistor (MOSFET) designed for a wide range of applications. This power MOSFET is well-suited for use in power management, load switching, and conversion systems, offering a compact and efficient solution for designers looking to optimize their electronic circuits.

Constructed with advanced trench MOSFET technology, the DMN6040SE-13 provides excellent R<sub>DS(on) and low gate charge performance, leading to reduced conduction and switching losses. This makes it an ideal choice for high-efficiency power supplies, DC-DC converters, and other power-intensive applications where energy conservation is critical.

The device is housed in a space-saving SOP-8 package, which not only minimizes the footprint on printed circuit boards but also ensures robust thermal performance and enhanced mechanical durability. The compact form factor of the DMN6040SE-13 allows for greater design flexibility, particularly in applications where space is at a premium.

Key features of the DMN6040SE-13 include:

  • V<sub>DS (Drain-Source Voltage) of 60V, which provides a comfortable margin for a variety of electronic designs.
  • Low threshold voltage (V<sub>GS(th)) that ensures the MOSFET can be easily driven by low-voltage logic signals, improving compatibility with contemporary microcontrollers and digital ICs.
  • High continuous drain current (I<sub>D) capability, enabling the device to handle significant power levels without performance degradation.
  • Fast switching speeds, which contribute to reduced switching losses and improved overall efficiency in high-frequency applications.
  • Thermal and overcurrent protection features that enhance the reliability and longevity of both the MOSFET and the end application.

With its combination of high performance, reliability, and miniaturization, the DMN6040SE-13 is a versatile component that meets the demands of modern electronic designs. Whether it's for power regulation in portable devices, motor control circuits, or LED lighting systems, this MOSFET from Diodes Incorporated is engineered to deliver top-notch performance in a variety of settings.

For detailed specifications and application guidelines, designers and engineers are encouraged to consult the DMN6040SE-13 datasheet available on the Diodes Incorporated website or through authorized distributors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3657 $52.3884
28+ $3.5821 $100.2988
44+ $3.4702 $152.6888
60+ $3.3583 $201.4980
78+ $3.2463 $253.2114
104+ $2.9105 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 294 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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