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DMN63D8LV-7

Part No DMN63D8LV-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 0.26A SOT563
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 260mA
Maximum Rds On at Id,Vgs 2.8 Ohm @ 250mA, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.87nC @ 10V
Max Input Capacitance 22pF @ 25V
Maximum Power Dissipation 450mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 113448-DMN63D8LV-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name DMN63D8LV
Introduction Date August 28, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian DMN63D8LV-7 CAD Model

Description

Overview of Diodes Incorporated DMN63D8LV-7

The DMN63D8LV-7 is a high-performance N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is a part of their extensive range of discrete, analog, and mixed-signal semiconductors. The DMN63D8LV-7 is designed for use in a variety of applications, including power management, load switch, and other general-purpose switching applications.

Key Features

  • Low On-Resistance: The DMN63D8LV-7 boasts a low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved efficiency in applications where it is deployed.
  • High-Speed Switching: With its fast switching characteristics, this MOSFET is an excellent choice for high-speed circuit designs, contributing to better performance and lower switching losses.
  • Low Threshold Voltage: The low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, making it compatible with low-voltage logic and microcontroller outputs.
  • Surface Mount Package: The DMN63D8LV-7 comes in a compact SOT-23 package, which is ideal for space-constrained applications and allows for efficient PCB layout design.
  • RoHS Compliant: In line with environmental standards, this product is RoHS compliant, ensuring that it is free from hazardous substances and suitable for use in green electronics.

Applications

The versatility of the DMN63D8LV-7 allows it to be utilized across a wide range of applications. It is particularly well-suited for:

  • Power management circuits
  • DC/DC converters
  • Battery powered devices
  • Load switches
  • Motor control systems
  • LED lighting solutions

Technical Specifications

Some of the key technical specifications of the DMN63D8LV-7 include:

  • Drain-Source Voltage (V<sub>DS): 60V
  • Continuous Drain Current (I<sub>D): 630mA
  • Power Dissipation (P<sub>D): 350mW
  • Operating Temperature Range: -55°C to +150°C

The DMN63D8LV-7 from Diodes Incorporated is a reliable and efficient solution for designers looking for a high-performance N-Channel MOSFET. With its low on-resistance, high-speed switching, and compact form factor, it is an excellent choice for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
530+ $0.0951 $50.4030
1,125+ $0.0891 $100.2375
1,745+ $0.0861 $150.2445
2,500+ $0.0800 $200.0000
3,250+ $0.0770 $250.2500
4,055+ $0.0740 $300.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300,000 pieces
MOQ: 530 pcs
Order Increment : 1 pcs
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