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DXTN5860DFDB-7

Part No DXTN5860DFDB-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description SS LOW SAT TRANSISTOR U-DFN2020- / Bipolar (BJT) Transistor NPN 60 V 6 A 115MHz 690 mW Surface Mount U-DFN2020-3 (Type B)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 315mV @ 300mA, 6A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 500mA, 2V
Power - Max 690 mW
Frequency - Transition 115MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 3-UDFN Exposed Pad
Supplier Device Package U-DFN2020-3 (Type B)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1354171-DXTN5860DFDB-7
Ultra Librarian 3D Model Ultra Librarian DXTN5860DFDB-7 CAD Model

Description

The DXTN5860DFDB-7 is a cutting-edge electronic component manufactured by Diodes Incorporated, a renowned leader in the semiconductor industry. This particular product is a testament to the company's commitment to providing high-quality, reliable solutions for a wide range of electronic applications.

Key Features

  • Transistor Type: This device is a NPN transistor, which is known for its effectiveness in amplifying and switching electronic signals.
  • Configuration: The DXTN5860DFDB-7 is a dual transistor, meaning it contains two transistors in one package, which is ideal for applications requiring matched transistor pairs.
  • Power Dissipation: It boasts a power dissipation of 1.5W, which ensures that it can handle a considerable amount of energy without compromising its performance.
  • Collector-Emitter Voltage: With a Vceo of 60V, this component can tolerate significant voltage across the collector-emitter terminals, making it suitable for various circuits.
  • Collector Current: It supports a collector current (Ic) of up to 2A, allowing it to drive higher current loads.
  • DC Current Gain: The device provides a high DC current gain (hFE), which is crucial for applications where signal amplification is required.
  • Package: The DXTN5860DFDB-7 comes in a small and efficient DFN2020B-6 (Type B) package, which is designed for space-saving on printed circuit boards (PCBs).

Applications

This versatile NPN transistor is suitable for a variety of applications, including but not limited to:

  • Switching regulators
  • Power management circuits
  • Motor control drivers
  • Signal amplification in audio and communication devices

Quality and Reliability

Diodes Incorporated ensures that the DXTN5860DFDB-7 meets rigorous quality standards, providing customers with a dependable component that can be used in commercial, industrial, and even harsh environments. The product undergoes thorough testing to guarantee its performance and longevity.

For engineers and designers looking for a reliable NPN transistor that offers dual configuration, high power handling, and efficient packaging, the DXTN5860DFDB-7 from Diodes Incorporated is an excellent choice that promises to deliver top-notch performance in a myriad of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.7720 $63.0880
8+ $12.9412 $103.5296
12+ $12.5368 $150.4416
17+ $12.1324 $206.2508
22+ $11.7279 $258.0138
29+ $10.5147 $304.9263
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,820 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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