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ZTX851STZ

Part No ZTX851STZ
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 5A E-LINE
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 25 Weeks
Features Bipolar (BJT) Transistor NPN 60 V 5 A 130MHz 1.2 W Through Hole E-Line (TO-92 compatible)
Manufacturer Diodes Incorporated
Package Cut Tape (CT), Tape & Box (TB)
Operating Temperature Range -55°C ~ 200°C (TJ)
Mounting Through Hole
Package E-Line-3, Formed Leads
Case / Package E-Line (TO-92 compatible)
Family Name ZTX851
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number ZTX851STZ-ND, ZTX851SCT, ZTX851STB
Quantity per package 2000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 904355-ZTX851STZ
Ultra Librarian 3D Model Ultra Librarian ZTX851STZ CAD Model

Description

The ZTX851STZ is a high-performance bipolar transistor from the renowned semiconductor manufacturer Diodes Incorporated. This device is designed to meet the rigorous demands of modern electronic circuits, providing a blend of speed, efficiency, and reliability that is ideal for a variety of applications.

Key Features

  • High Current Gain (hFE): The ZTX851STZ boasts a high current gain, which ensures efficient amplification in electronic circuits. This characteristic is critical for applications requiring high amplification of weak signals.
  • Low Saturation Voltage: With its low saturation voltage, the ZTX851STZ minimizes power loss and improves overall efficiency, making it suitable for power-sensitive designs.
  • High Breakdown Voltage: The device's high breakdown voltage allows it to withstand voltage spikes, ensuring durability and long-term reliability.
  • Fast Switching Speed: Featuring fast switching capabilities, the ZTX851STZ is an excellent choice for high-frequency applications, including switching power supplies and pulse circuits.

Applications

The versatile nature of the ZTX851STZ makes it suitable for a wide range of applications. It is commonly used in:

  • Power management circuits
  • Audio amplifiers
  • Signal processing
  • Switching regulators
  • Driver stages in hi-fi amplifiers and television circuits

Product Specifications

Parameter Value Collector-Emitter Voltage (VCEO) 60V Collector Current (IC) 5A Power Dissipation (PD) 1.2W Operating Temperature Range (TJ) -55°C to +150°C

With its robust construction and the quality assurance of Diodes Incorporated, the ZTX851STZ transistor is a dependable component for designers and engineers looking to enhance the performance and reliability of their electronic designs.

Ordering Information

The ZTX851STZ is available in a TO-92-3 package, ensuring compatibility with a wide range of PCB layouts. For detailed ordering and pricing information, please visit the Diodes Incorporated website or contact an authorized distributor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5410 $51.3950
200+ $0.5068 $101.3600
310+ $0.4896 $151.7760
440+ $0.4554 $200.3760
575+ $0.4383 $252.0225
715+ $0.4212 $301.1580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 884 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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Shipping Information

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