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ZVN2106GTC

Part No ZVN2106GTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.71A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 710mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.4V @ 1mA
Max Input Capacitance 75pF @ 18V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1120298-ZVN2106GTC
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVN2106GTC CAD Model

Description

Introducing the ZVN2106GTC MOSFET by Diodes Incorporated

The ZVN2106GTC from Diodes Incorporated is a high-performance N-Channel enhancement mode vertical DMOS FET that is designed for use in a wide range of electronic applications. This particular MOSFET is well-suited for applications requiring a combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.

With its compact SOT-223 package, the ZVN2106GTC offers a space-saving solution for modern electronic circuits, while providing the robustness and performance expected from a leading semiconductor manufacturer like Diodes Incorporated. The device is lead-free, halogen-free, and RoHS compliant, making it an environmentally friendly option for your designs.

Key Features of the ZVN2106GTC:

  • Low On-Resistance: The MOSFET is designed with a low on-state resistance, which results in improved efficiency and reduced heat dissipation during operation.
  • High-Speed Switching: The device is capable of high-speed switching operations, which makes it suitable for high-frequency applications and pulse circuits.
  • Gate Protection: The ZVN2106GTC includes integrated gate protection to safeguard the device against static discharge and other potential gate-related damage.
  • Enhanced Thermal Performance: The SOT-223 package enhances thermal performance, ensuring reliability even under high current conditions.

Applications:

The versatility of the ZVN2106GTC allows it to be integrated into a variety of applications, including:

  • Power Management Circuits
  • Motor Control Systems
  • DC-DC Converters
  • Load Switches
  • Solenoid and Relay Drivers

Whether you're designing consumer electronics, automotive systems, or industrial controls, the ZVN2106GTC offers the performance and reliability you need. With Diodes Incorporated's commitment to quality, you can be assured that the ZVN2106GTC MOSFET will meet the rigorous demands of your next project.

For detailed specifications and application notes, visit the Diodes Incorporated website or contact your local sales representative to learn more about how the ZVN2106GTC can be integrated into your designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5770 $60.5850
245+ $0.4735 $116.0075
380+ $0.4587 $174.3060
525+ $0.4439 $233.0475
675+ $0.4291 $289.6425
905+ $0.3848 $348.2440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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