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Same model may have multiple batches, images only for reference.
FDG6301N_F085 Real Image
Same model may have multiple batches, images only for reference.

FDG6301N_F085

Part No FDG6301N_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 0.22A SC70-6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 220mA
Maximum Rds On at Id,Vgs 4 Ohm @ 220mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.4nC @ 4.5V
Max Input Capacitance 9.5pF @ 10V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Win Source Part Number 1038143-FDG6301N_F085
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDG6301N_F085 CAD Model

Description

The Fairchild/ON Semiconductor FDG6301N_F085 is an active electronic component with a temperature range of -55°C to 150°C.

  • Maximum Power Dissipation: 300mW
  • Drain-Source Breakdown Voltage: 25V
  • FET Type: 2 N-channel (dual)
  • Feature: Logic level gate
  • Continuous Drain Current: 220mA @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Alternative Parts: FDG6301N, DMG6301UDW-7, and DMG6301UDW-13

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2005 $50.1250
535+ $0.1878 $100.4730
830+ $0.1815 $150.6450
1,185+ $0.1688 $200.0280
1,540+ $0.1624 $250.0960
1,925+ $0.1561 $300.4925
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