The FDMS86105 is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 6A (Ta), 26A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 4V @ 250μA
• Max Gate Charge: 11nC @ 10V
• Mounting Type: SMD (SMT)
• Package: 8-PQFN (5x6), Power56
• Technology: MOSFET
• Polarity: N-Channel
• Power Dissipation: 2.5W (Ta), 48W (Tc)
• Drive Voltage: 6V, 10V
• Temperature Range: -55°C to 150°C
• Maximum Rds On: 34 mOhm @ 6A, 10V
• Maximum Input Capacitance: 645pF @ 50V
• Maximum Gate-Source Voltage: ±20V
• Applications: Power supplies, motor controls, and inverters