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FDN338P

Part No FDN338P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.6A SSOT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 6.2nC @ 4.5V
Max Input Capacitance 451pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 115 mOhm @ 1.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 016105-FDN338P
Family Name FDN338P
Introduction Date April 17, 1998
ECCN EAR99
Country of Origin Israel, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDN338P CAD Model

Description

The Fairchild/ON Semiconductor FDN338P is a P-channel MOSFET electronic component designed for use in power management and industrial applications.

  • Drain-Source Breakdown Voltage: 20V (Max)
  • Continuous Drain Current: 1.6A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Gate Charge: 6.2nC @ 4.5V (Max)
  • Package: SuperSOT-3
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1892 $50.1380
645+ $0.1553 $100.1685
1,000+ $0.1504 $150.4000
1,375+ $0.1456 $200.2000
1,780+ $0.1407 $250.4460
2,380+ $0.1262 $300.3560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 135,000 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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