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Same model may have multiple batches, images only for reference.
FDP047AN08A0 Real Image
Same model may have multiple batches, images only for reference.

FDP047AN08A0

Part No FDP047AN08A0
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 80A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 138nC @ 10V
Max Input Capacitance 6600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 016116-FDP047AN08A0
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP047AN08A0 CAD Model

Description

The Fairchild/ON Semiconductor FDP047AN08A0 MOSFET is a N-Channel polarity device.

  • Drain-Source Breakdown Voltage: 75V
  • Maximum Continuous Drain Current: 15A (Tc) @ 25°C
  • Maximum Power Dissipation: 310W (Tc)
  • Maximum Rds On: 4.7 mOhm @ 80A, 10V
  • Case/Package: TO-220-3
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 138nC @ 10V
  • Application: Discrete Semiconductor Products
  • Supply: Open Market
  • Package Quantity: 800

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188+ $1.8522 $348.2136
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Availability: 9,500 pieces
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