The FDP047AN08A0_F102 is an N-Channel Power MOSFET from Fairchild Semiconductor (now ON Semiconductor). This MOSFET is engineered for high-efficiency switching applications, offering a combination of low on-resistance, fast switching speed, and robust design. It is commonly used in applications such as DC-DC converters, motor control, and power supplies.

Applications

• DC-DC converters
• Motor control
• Power supplies
• Synchronous rectification
• Load switching

Features

• Low on-resistance (RDS(on))
• Fast switching speed
• High avalanche energy rating
• High current capability
• Lead-free package
• RoHS compliant

Benefits

• Improved energy efficiency
• Reduced power dissipation
• Enhanced system reliability
• Smaller and lighter designs
• Environmentally friendly

Additional Details

The FDP047AN08A0_F102 features a drain-source voltage (VDS) of 80V and a continuous drain current (ID) of up to 91A (depending on the specific conditions and package). The low on-resistance minimizes conduction losses, contributing to its high efficiency. The fast switching speed enables higher frequency operation. It is available in a TO-220 package. This MOSFET is designed to operate over a wide temperature range. Its robust design ensures reliable performance in demanding applications. The FDP047AN08A0_F102 is well-suited for applications that require high efficiency and reliability, making it a popular choice for power supply designers. The optimized gate charge reduces switching losses, further improving efficiency. It offers excellent thermal performance, enabling high power density designs.