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Same model may have multiple batches, images only for reference.
FDS4501H Real Image
Same model may have multiple batches, images only for reference.

FDS4501H

Part No FDS4501H
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V/20V 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V, 20V
Continuous Drain Current at 25°C 9.3A, 5.6A
Maximum Rds On at Id,Vgs 18 mOhm @ 9.3A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 1958pF @ 10V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 104106-FDS4501H
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS4501H CAD Model

Description

The Fairchild/ON Semiconductor 104106-FDS4501H is a N and P-Channel MOSFET with a Drain-Source Breakdown Voltage of 30V and 20V respectively.

  • Continuous Drain Current: 9.3A (N-Channel) and 5.6A (P-Channel) at 25°C
  • Application: Discrete Semiconductor Products
  • Maximum Power Dissipation: 1W
  • Package: SMD (SMT) 8-SO
  • Operating Temperature: -55°C to 150°C (TJ)
  • Supply and Demand: Balanced
  • Quantity per Package: 2,500 pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.3026 $59.0070
470+ $0.2483 $116.7010
720+ $0.2414 $173.8080
995+ $0.2333 $232.1335
1,285+ $0.2252 $289.3820
1,715+ $0.2021 $346.6015
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,800 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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