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Same model may have multiple batches, images only for reference.
FDS6673AZ Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDS6673AZ

Part No FDS6673AZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 14.5A 8SOIC
Datasheet
FDS6673AZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 118nC @ 10V
Max Input Capacitance 4480pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 7.2 mOhm @ 14.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 067085-FDS6673AZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDS6673AZ CAD Model

Description

The FDS6673AZ is a P-channel MOSFET from Fairchild/ON Semiconductor. The product is obsolete (EOL).

  • Package: 8-SO
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 14.5A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge (Maximum): 118nC @ 10V
  • Input Capacitance (Maximum): 4480pF @ 15V
  • Rds On (Maximum): 7.2 mOhm @ 14.5A, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Balanced

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