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Same model may have multiple batches, images only for reference.
FQA34N20L Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQA34N20L

Part No FQA34N20L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 34A TO-3P
Datasheet
FQA34N20L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 72nC @ 5V
Max Input Capacitance 3900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 210W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 001229-FQA34N20L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQA34N20L CAD Model

Description

The FQA34N20L is an obsolete N-channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation (Max): 210W
  • Continuous Drain Current: 34A
  • Drain-Source Breakdown Voltage: 200V
  • Rds On (Max): 75 mOhm @ 17A and 10V
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3386 $120.4740
135+ $1.2971 $175.1085
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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