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Same model may have multiple batches, images only for reference.
FQB70N10 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB70N10

Part No FQB70N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 57A D2PAK
Datasheet
FQB70N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3300pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.75W (Ta), 160W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 28.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 204283-FQB70N10
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQB70N10 CAD Model

Description

The FQB70N10 is an obsolete N-channel MOSFET designed for use in discrete semiconductor products. With a maximum power dissipation of 160W and a continuous drain current of 57A, this MOSFET is suitable for a range of applications requiring high power capabilities.

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On: 23 mOhm @ 28.5A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $28.4719 $85.4157
5+ $23.3610 $116.8050
8+ $22.6311 $181.0488
11+ $21.9011 $240.9121
14+ $21.1712 $296.3968
19+ $18.9813 $360.6447
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,800 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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