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FQD2N80TF

Name: FQD2N80TF
Brand: Fairchild/ON Semiconductor
SKU: 454783
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	FQD2N80TF
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 800V 1.8A DPAK
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	800V
Continuous Drain Current at 25°C	1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	5V @ 250μA
Max Gate Charge	15nC @ 10V
Max Input Capacitance	550pF @ 25V
Maximum Gate-Source Voltage	±30V
Power Dissipation (Max)	2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs	6.3 Ohm @ 900mA, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	D-Pak
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	1039728-FQD2N80TF
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian FQD2N80TF CAD Model

Alternative Products

Description

The FQD2N80TF is an N-Channel MOSFET from Fairchild/ON Semiconductor.

Drain-Source Breakdown Voltage: 800V
Continuous Drain Current: 1.8A @ 25°C
Gate-Source Threshold Voltage: 5V @ 250μA
Maximum Rds On: 6.3 Ohm @ 900mA and 10V
Power Dissipation: 2.5W (Ta) and 50W (Tc)
Package: D-Pak case
Use: Discrete Semiconductor Products
Drive Voltage: 10V
Status: obsolete (EOL)
Temperature Range: -55°C to 150°C (TJ)
Supply and Demand Status: sufficient

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