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Same model may have multiple batches, images only for reference.
SI6463DQ Real Image
Same model may have multiple batches, images only for reference.

SI6463DQ

Part No SI6463DQ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 12.5mOhm @ 8.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 5045 pF @ 10 V
Power Dissipation (Max) 600mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 322495-SI6463DQ
Ultra Librarian 3D Model Ultra Librarian SI6463DQ CAD Model

Description

The SI6463DQ is a P-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for discrete semiconductor applications.

  • Category: Transistors - FETs, MOSFETs
  • Series: PowerTrench™
  • Package: Bulk
  • Units per Package: 2,500
  • Mounting Type: Surface Mountable
  • Drain-to-Source Voltage: 20V
  • Continuous Drain Current @ 25°C: 8.8A
  • Maximum On-Resistance @ Drain Current, Gate-Source Voltage: 12.5mOhm @ 8.8A, 4.5V
  • Gate Threshold Voltage @ Drain Current: 1.5V @ 250µA
  • Manufacturer: Fairchild/ON Semiconductor
  • Status: Active
  • Temperature Range: -55°C to 150°C

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