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BCR135E6359HTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCR135E6359HTMA1

Part No BCR135E6359HTMA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP SOT23
Datasheet
BCR135E6359HTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 70 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 150MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022687-BCR135E6359HTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCR135E6359HTMA1 CAD Model

Description

The BCR135E6359HTMA1 is an NPN pre-biased transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA.

  • Manufacturer: Infineon Technologies
  • Collector-Emitter Breakdown Voltage: 50V
  • Continuous Collector Current: 100mA
  • Frequency Transition: 150MHz
  • Gain (hFE) (Min): 70 @ 5mA, 5V
  • Power Dissipation: 200mW
  • Package: PG-SOT23-3
  • Applications: Amplifiers, switches, and power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,495+ $0.0433 $64.7335
3,640+ $0.0356 $129.5840
5,620+ $0.0346 $194.4520
7,755+ $0.0334 $259.0170
10,000+ $0.0324 $324.0000
13,395+ $0.0290 $388.4550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 172,800 pieces
MOQ: 1495 pcs
Order Increment : 1 pcs
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