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BSZ0909NSATMA1

Part No BSZ0909NSATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 34V 9A 8TSDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 34V
Continuous Drain Current at 25°C 9A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 1310pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 109655-BSZ0909NSATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSZ0909NSATMA1 CAD Model

Description

BSZ0909NSATMA1 - Advanced N-channel Power MOSFET

The BSZ0909NSATMA1 is crafted for superior electrical performance, enhancing power efficiency and reliability in demanding conditions.

  • Applications:
    • Industrial power supplies
    • Renewable energy systems
    • Automotive power management
  • Key Features and Benefits:
    • Reduced switching losses maximizing energy conversion
    • Stable performance over a wide range of voltages
    • Compact and optimized package size
    • Robust against environmental stressors

This MOSFET meets high expectations for power applications where efficiency and durability are crucial.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4752 $52.2720
225+ $0.4452 $100.1700
350+ $0.4301 $150.5350
500+ $0.4000 $200.0000
650+ $0.3850 $250.2500
815+ $0.3700 $301.5500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,320 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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