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Same model may have multiple batches, images only for reference.
IPA105N15N3 G Real Image
Same model may have multiple batches, images only for reference.

IPA105N15N3 G

Part No IPA105N15N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 37A TO220-FP
Datasheet
IPA105N15N3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 160μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 4300pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40.5W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 37A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1045723-IPA105N15N3 G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPA105N15N3 G CAD Model

Description

The IPA105N15N3 G is a N-Channel MOSFET from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 37A @ 25°C
  • Package: PG-TO220-FP
  • Maximum Power Dissipation: 40.5W @ Tc
  • Maximum Rds On: 10.5 mOhm @ 37A, 10V
  • Maximum Gate Charge: 55nC @ 10V
  • Suitable for: power management, motor drive & control, and automotive

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77+ $3.0353 $233.7181
99+ $2.9349 $290.5551
132+ $2.6311 $347.3052
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