The IPB180N04S4-00 is a high-performance OptiMOS™ power MOSFET from Infineon Technologies, designed for a wide range of applications requiring efficient power switching. This N-channel MOSFET leverages advanced trench technology to minimize on-state resistance (Rds(on)) and gate charge (Qg), resulting in reduced power losses and improved overall system efficiency. Its robust design makes it suitable for demanding environments and high-reliability applications.

Applications:

• Synchronous Rectification in AC-DC Power Supplies
• DC-DC Converters
• Motor Control Applications
• Class D Audio Amplifiers
• Uninterruptible Power Supplies (UPS)

Features:

• Optimized for high-frequency switching
• Low on-state resistance (Rds(on)) for minimal power losses
• Low gate charge (Qg) for fast switching speeds
• Avalanche rated for robustness
• Logic level compatibility
• 100% avalanche tested
• Pb-free lead finish; RoHS compliant

Benefits:

• Increased energy efficiency in power conversion systems
• Reduced heat dissipation, leading to smaller heat sink requirements
• Improved system reliability due to robust design and avalanche rating
• Simplified gate drive circuitry thanks to logic level compatibility
• Higher power density due to efficient thermal management
• Environmentally friendly due to Pb-free and RoHS compliance

Additional Details:

The IPB180N04S4-00 is an N-channel MOSFET with a drain-source voltage (Vds) rating of 40V and a continuous drain current (Id) rating of up to 180A (depending on the case temperature). Its low Rds(on), typically around 2.7 mΩ at Vgs=10V, minimizes conduction losses. The device is typically available in a TO-263 package, suitable for surface mounting. The device's thermal resistance characteristics allow for efficient heat transfer from the junction to the ambient environment.

This MOSFET is designed to operate over a wide temperature range, ensuring stable performance in various operating conditions. The gate threshold voltage is optimized for easy driving. It has very good dynamic dv/dt ruggedness.