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Same model may have multiple batches, images only for reference.
IPB60R099C6 Real Image
Same model may have multiple batches, images only for reference.

IPB60R099C6

Part No IPB60R099C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 37.9A TO263
Datasheet
IPB60R099C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.21mA
Max Gate Charge 119nC @ 10V
Max Input Capacitance 2660pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 278W (Tc)
Maximum Rds On at Id,Vgs 99 mOhm @ 18.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068975-IPB60R099C6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB60R099C6 CAD Model

Description

The Infineon Technologies IPB60R099C6 is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 600V and a maximum continuous drain current of 37.9A at 25°C.

  • Package: PG-TO263-2
  • Maximum Power Dissipation: 278W (Tc)
  • Maximum Rds On @ Id,Vgs: 99 mOhm @ 18.1A, 10V
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 3.5V @ 1.21mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 119nC @ 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.0002 $54.0018
21+ $4.9233 $103.3893
32+ $4.7694 $152.6208
44+ $4.6156 $203.0864
57+ $4.4617 $254.3169
75+ $4.0002 $300.0150
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Availability: 20,000 pieces
MOQ: 9 pcs
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