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Same model may have multiple batches, images only for reference.
IPB70N10S3L12ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB70N10S3L12ATMA1

Part No IPB70N10S3L12ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 70A TO263-3 / Trans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
Datasheet
IPB70N10S3L12ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.4V @ 83μA
Gate Charge (Qg) (Maximum) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5550pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 125W (Tc)
Rds On (Maximum) @ Id, Vgs 11.8 mOhm @ 70A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 776851-IPB70N10S3L12ATMA1
Popularity Medium
Supply and Demand Status Balance
Family Name IPB70N10S3L12ATMA1
Introduction Date April 21, 2008
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IPB70N10S3L12ATMA1 CAD Model

Description

The Infineon Technologies IPB70N10S3L12ATMA1 is an OptiMOS MOSFET manufactured by Infineon Technologies.

  • Continuous Drain Current @ 25°C: 70A
  • Maximum Drain-Source Voltage: 100V
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-263-3, D2Pak
  • Mounting: SMD
  • Introduction Date: April 21, 2008
  • Estimated EOL Date: 2027
  • ECCN: EAR99
  • Manufactured In: Malaysia
  • Supply and Demand Status: Balanced

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