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Same model may have multiple batches, images only for reference.
IPD60R2K1CEAUMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD60R2K1CEAUMA1

Part No IPD60R2K1CEAUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.3A TO252-3  /  N-Channel 600 V 2.3A (Tc) 38W (Tc) Surface Mount PG-TO252-3
Datasheet
IPD60R2K1CEAUMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ CE
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 100 V
Power Dissipation (Max) 38W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD60R2
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPD60R2K1CEAUMA1CT,IPD60R2K1CEAUMA1DKR,IPD60R2K1CEAUMA1TR,IPD60R2K1CEAUMA1-ND,SP001396904
Standard Package 2,500
Win Source Part Number 970978-IPD60R2K1CEAUMA1
Ultra Librarian 3D Model Ultra Librarian IPD60R2K1CEAUMA1 CAD Model

Description

The Infineon Technologies IPD60R2K1CEAUMA1 is a high-performance MOSFET transistor used in various applications. Infineon Technologies

  • Vdss: 600V
  • Id: 2.3A
  • Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
  • Qg (Max) @ Vgs: 6.7nC @ 10V
  • Ciss (Max) @ Vds: 140pF @ 100V
  • Power Dissipation: 38W
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • RoHS Compliant: Yes
  • Max Drive Voltage (Max Rds On, Min Rds On): 10V
  • Operating Temperature: -40°C to 150°C

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