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Same model may have multiple batches, images only for reference.
IPD60R380C6 Real Image
Same model may have multiple batches, images only for reference.

IPD60R380C6

Part No IPD60R380C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10.6A TO252
Datasheet
IPD60R380C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 320μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 700pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017325-IPD60R380C6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD60R380C6 CAD Model

Description

The Infineon Technologies MOSFET 017325-IPD60R380C6 is a high power N-channel polarity component that is designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 10.6A @ 25°C
  • Maximum Rds On: 380 mOhm @ 3.8A, 10V
  • Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Temperature Range: -55°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
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100+ $1.1900 $119.0000
155+ $1.1528 $178.6840
210+ $1.1157 $234.2970
270+ $1.0785 $291.1950
360+ $0.9669 $348.0840
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