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IPD90R1K2C3ATMA1 Real Image IPD90R1K2C3ATMA1 Real Image
Same model may have multiple batches, images only for reference.
IPD90R1K2C3ATMA1 Real Image IPD90R1K2C3ATMA1 Real Image
IPD90R1K2C3ATMA1 Real Image IPD90R1K2C3ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD90R1K2C3ATMA1

Part No IPD90R1K2C3ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 5.1A TO-252
Datasheet
IPD90R1K2C3ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 310μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 710pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 110133-IPD90R1K2C3ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD90R1K2C3ATMA1 CAD Model

Description

The Infineon Technologies IPD90R1K2C3ATMA1 is an N-Channel MOSFET with a power dissipation (Max) of 83W (Tc).

  • Power Dissipation (Max): 83W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PG-TO252-3
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current @ 25°C: 5.1A (Tc)
  • Supply and Demand Status: balance
  • Gate-Source Threshold Voltage: 3.5V @ 310μA
  • Max Gate Charge: 28nC @ 10V
  • Max Input Capacitance: 710pF @ 100V
  • Maximum Rds On @ Id,Vgs: 1.2 Ohm @ 2.8A, 10V

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130+ $0.7732 $100.5160
205+ $0.7471 $153.1555
290+ $0.6948 $201.4920
375+ $0.6687 $250.7625
470+ $0.6426 $302.0220
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