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Same model may have multiple batches, images only for reference.
IPI110N20N3G Real Image
Same model may have multiple batches, images only for reference.

IPI110N20N3G

Part No IPI110N20N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 88A TO262-3
Datasheet
IPI110N20N3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 270μA
Max Gate Charge 87nC @ 10V
Max Input Capacitance 7100pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 88A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069012-IPI110N20N3G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI110N20N3G CAD Model

Description

The 069012-IPI110N20N3G is an N-channel MOSFET transistor from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Continuous Drain Current @ 25°C: 88A
  • Gate-Source Threshold Voltage: 4V @ 270μA
  • Maximum Gate Charge: 87nC @ 10V
  • Package: through-hole
  • Operating Temperature Range: -55°C to 175°C
  • Status: active
  • Popularity: high

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