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Same model may have multiple batches, images only for reference.
IPP080N06N G Real Image
Same model may have multiple batches, images only for reference.

IPP080N06N G

Part No IPP080N06N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO-220
Datasheet
IPP080N06N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 150μA
Gate Charge (Qg) (Maximum) @ Vgs 93nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3500pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 214W (Tc)
Rds On (Maximum) @ Id, Vgs 8 mOhm @ 80A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO220-3-1
Package TO-220-3
Win Source Part Number 776901-IPP080N06N G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP080N06N G CAD Model

Description

The Infineon Technologies 776901-IPP080N06N G is a MOSFET transistor from the OptiMOS series.

  • Package: through-hole TO-220-3
  • Maximum Power Dissipation: 214W (Tc)
  • Continuous Drain Current: 80A @ 25°C (Tc)
  • Drain-Source Voltage: 60V
  • Input Capacitance: 3500pF @ 30V
  • Gate Charge: 93nC @ 10V
  • Maximum Vgs: ±20V
  • Maximum Rds On: 8 mOhm @ 80A, 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Status: Obsolete (EOL)

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195+ $1.5170 $295.8150
255+ $1.3601 $346.8255
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