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Same model may have multiple batches, images only for reference.
IPW50R299CP Real Image
Same model may have multiple batches, images only for reference.

IPW50R299CP

Part No IPW50R299CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 12A TO247-3
Datasheet
IPW50R299CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1190pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 299 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 069113-IPW50R299CP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPW50R299CP CAD Model

Description

The Infineon Technologies IPW50R299CP is an N-Channel MOSFET designed for use in high voltage applications.

  • Maximum Power Dissipation: 104W
  • Drain-Source Breakdown Voltage: 550V
  • Operating Temperature Range: -55°C to 150°C
  • Gate-Source Threshold Voltage: 3.5V @ 440μA
  • Packaging: PG-TO247-3
  • Mounting: Through-hole
  • Maximum Rds On at Id, Vgs: 299 mOhm @ 6.6A, 10V

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23+ $4.4444 $102.2212
35+ $4.3056 $150.6960
48+ $4.1667 $200.0016
63+ $4.0278 $253.7514
84+ $3.6111 $303.3324
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