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Same model may have multiple batches, images only for reference.
IPW60R099P6XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPW60R099P6XKSA1

Part No IPW60R099P6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 37.9A TO247-3 / N-Channel 600 V 37.9A (Tc) 278W (Tc) Through Hole PG-TO247-3
Datasheet
IPW60R099P6XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3330 pF @ 100 V
Power Dissipation (Max) 278W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IPW60R099
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-IPW60R099P6XKSA1,SP001114658,INFINFIPW60R099P6XKSA1
Standard Package 30
Win Source Part Number 1013988-IPW60R099P6XKSA1
Ultra Librarian 3D Model Ultra Librarian IPW60R099P6XKSA1 CAD Model

Description

The Infineon Technologies 1013988-IPW60R099P6XKSA1 is a N-channel MOSFET transistor designed for single use.

  • Drain to source voltage: 600V
  • Continuous drain current: 37.9A @ 25°C
  • On-resistance: 99mOhm @ 14.5A and 10V
  • Maximum gate-source voltage: ±20V
  • Operating temperature range: -55°C to 150°C
  • Package: TO-247-3
  • Supplier device package: PG-TO247-3
  • ECCN: EAR99
  • MSL level: 1 (Unlimited).

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