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Same model may have multiple batches, images only for reference.
IRF2807ZSTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRF2807ZSTRLPBF

Part No IRF2807ZSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A D2PAK
Datasheet
IRF2807ZSTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 9.4 mOhm @ 53A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046423-IRF2807ZSTRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF2807ZSTRLPBF CAD Model

Description

The Infineon Technologies IRF2807ZSTRLPBF is a power MOSFET transistor designed for use in discrete semiconductor products.

  • Polarity: N-Channel
  • Power Dissipation: 170W (Tc)
  • Mounting Type: SMD (SMT)
  • Technology: MOSFET
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 9.4 mOhm @ 53A, 10V
  • Status: Active
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Limited

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