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Same model may have multiple batches, images only for reference.
IRF5850TRPBF
Same model may have multiple batches, images only for reference.

IRF5850TRPBF

Part No IRF5850TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 2.2A 6-TSOP
Datasheet
IRF5850TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.2A
Maximum Rds On at Id,Vgs 135 mOhm @ 2.2A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 5.4nC @ 4.5V
Max Input Capacitance 320pF @ 15V
Maximum Power Dissipation 960mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 098826-IRF5850TRPBF
Family Name IRF5850
Introduction Date August 31, 2005
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian IRF5850TRPBF CAD Model

Description

The Infineon Technologies IRF5850TRPBF MOSFET is a dual P-channel power transistor with a maximum drain-source breakdown voltage of 20V and a maximum continuous drain current of 2.2A at 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C): 2.2A @ 25°C
  • Maximum Power Dissipation: 960mW
  • Case/Package: 6-TSOP package
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,330 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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