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IRF7465TRPBF

Part No IRF7465TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 1.9A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 330pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 280 mOhm @ 1.14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001869-IRF7465TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7465TRPBF CAD Model

Description

The Infineon Technologies IRF7465TRPBF is an N-channel MOSFET integrated circuit designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 2.5W (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Maximum Rds On @ Id,Vgs: 280 mOhm @ 1.14A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Package: 8-SO
  • Popularity: High
  • Supply and Demand Status: Balanced
  • Temperature Range: -55°C to 150°C (TJ)
  • Commonly Used: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2463 $50.4915
495+ $0.2021 $100.0395
770+ $0.1958 $150.7660
1,060+ $0.1895 $200.8700
1,365+ $0.1832 $250.0680
1,830+ $0.1642 $300.4860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 82,593 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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