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Same model may have multiple batches, images only for reference.
IRF7477
Same model may have multiple batches, images only for reference.

IRF7477

Part No IRF7477
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A 8-SOIC
Datasheet
IRF7477 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 38nC @ 4.5V
Max Input Capacitance 2710pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001879-IRF7477
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF7477 CAD Model

Description

The Infineon Technologies IRF7477 is an N-Channel MOSFET designed for use in industrial power management.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 14A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 38nC @ 4.5V
  • Maximum Input Capacitance: 2710pF @ 15V
  • Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V
  • Packaging: Tube/rail
  • Popularity: Medium

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