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IRF7524D1TRPBF

Part No IRF7524D1TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.7A MICRO8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 8.2nC @ 4.5V
Max Input Capacitance 240pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 270 mOhm @ 1.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 001899-IRF7524D1TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7524D1TRPBF CAD Model

Description

The Infineon Technologies IRF7524D1TRPBF is a P-Channel MOSFET with Schottky Diode (Isolated) feature, which is widely used in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.7A @ 25°C
  • Maximum Power Dissipation: 1.25W (Ta)
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Max Gate Charge: 8.2nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 270 mOhm @ 1.2A, 4.5V
  • Package: Micro8
  • Operating Temperature: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Quantity per package: 4k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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