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Same model may have multiple batches, images only for reference.
IRF7707GTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7707GTRPBF

Part No IRF7707GTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 7A 8-TSSOP
Datasheet
IRF7707GTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 47nC @ 4.5V
Max Input Capacitance 2361pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1046699-IRF7707GTRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7707GTRPBF CAD Model

Description

The IRF7707GTRPBF is a P-Channel MOSFET manufactured by Infineon Technologies.

  • Popularity: Medium
  • Supply and demand: Balance
  • Maximum Power Dissipation: 1.5W (Ta)
  • Continuous Drain Current: 7A (Ta) @ 25°C
  • Lifecycle Status: Obsolete (EOL)
  • Package: 8-TSSOP

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