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IRF7807D1

Part No IRF7807D1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.3A 8-SOIC
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 17nC @ 5V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2.5W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 7A, 4.5V
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046726-IRF7807D1
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7807D1 CAD Model

Description

The Infineon Technologies IRF7807D1 is an N-channel MOSFET with a 30V drain-source breakdown voltage and an 8.3A continuous drain current at 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8.3A @ 25°C
  • Power Dissipation: 2.5W (Tc)
  • Drive Voltage: 4.5V
  • FET Feature: Schottky diode (isolated)
  • Category: Discrete semiconductor products
  • Case/Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 17nC @ 5V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On at Id, Vgs: 25 mOhm @ 7A, 4.5V
  • Supply and Demand Status: Sufficient
  • Quantity per Package: 95

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $1.0517 $68.3605
150+ $0.8628 $129.4200
235+ $0.8356 $196.3660
320+ $0.8085 $258.7200
415+ $0.7827 $324.8205
555+ $0.7011 $389.1105
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,956 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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