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IRFB7434GPBF

Part No IRFB7434GPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 40V 195A TO220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 324nC @ 10V
Max Input Capacitance 10820pF @ 25V
Maximum Gate-Source Voltage ±20V
Maximum Rds On at Id,Vgs 1.6 mOhm @ 100A, 10V
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1046822-IRFB7434GPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB7434GPBF CAD Model

Description

The IRFB7434GPBF is a discrete N-channel MOSFET from Infineon Technologies (formerly International Rectifier) designed for a wide range of power switching applications. This MOSFET combines low on-state resistance with fast switching speeds, making it suitable for demanding environments where efficiency and thermal performance are crucial.

Applications:

  • Synchronous rectification in AC-DC and DC-DC converters
  • Motor control
  • Uninterruptible Power Supplies (UPS)
  • Power inverters
  • High-frequency switching power supplies

Features:

  • Low on-state resistance (RDS(on)): Reduces conduction losses.
  • Fast switching speed: Minimizes switching losses and allows for higher frequency operation.
  • Avalanche rated: Provides robustness against voltage transients.
  • Lead-Free and RoHS Compliant: Meets environmental standards.
  • Advanced process technology: Optimizes performance and reliability.

Benefits:

  • High efficiency: Low RDS(on) and fast switching contribute to reduced power dissipation.
  • Compact design: Enables smaller and more efficient power supply solutions.
  • Increased reliability: Avalanche rating enhances device ruggedness in demanding conditions.
  • Environmentally friendly: RoHS compliance ensures adherence to environmental regulations.
  • Improved thermal performance: Optimized package design for effective heat dissipation.

Technical Specifications:

The IRFB7434GPBF features a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of up to 120A (depending on operating conditions and thermal management). The on-state resistance (RDS(on)) is very low, typically around 4.0 mΩ at VGS = 10V. The device is housed in a TO-220AB package, facilitating efficient heat dissipation. The gate threshold voltage is designed to be easily driven by standard logic levels.

This MOSFET is an excellent choice for applications requiring high efficiency, compact size, and robust performance. Its combination of low on-state resistance and fast switching speeds makes it a versatile component for modern power electronics designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8599 $65.0965
80+ $1.5261 $122.0880
120+ $1.4784 $177.4080
165+ $1.4307 $236.0655
210+ $1.3832 $290.4720
280+ $1.2400 $347.2000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,800 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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