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Same model may have multiple batches, images only for reference.
IRFB7434PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB7434PBF

Part No IRFB7434PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 40V 195A TO220
Datasheet
IRFB7434PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 324nC @ 10V
Max Input Capacitance 10820pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 294W (Tc)
Maximum Rds On at Id,Vgs 1.6 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 083702-IRFB7434PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFB7434PBF CAD Model

Description

The Infineon Technologies IRFB7434PBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 40V and a maximum continuous drain current of 195A at 25°C.

  • Drain-Source Breakdown Voltage: 40V
  • Maximum Continuous Drain Current: 195A @ 25°C
  • Maximum Power Dissipation: 294W
  • Maximum Gate Charge: 324nC @ 10V
  • Mounting Type: Through Hole
  • Package: TO-220AB
  • Rds On: 1.6 mOhm @ 100A, 10V

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Quantity Unit Price Ext. Price
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190+ $0.5380 $102.2200
290+ $0.5198 $150.7420
415+ $0.4835 $200.6525
540+ $0.4653 $251.2620
675+ $0.4471 $301.7925
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