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Same model may have multiple batches, images only for reference.
IRFL1006 Real Image
Same model may have multiple batches, images only for reference.

IRFL1006

Part No IRFL1006
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 1.6A SOT223
Datasheet
IRFL1006 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8nC @ 10V
Max Input Capacitance 160pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 220 mOhm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 127951-IRFL1006
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFL1006 CAD Model

Description

The Infineon Technologies MOSFET, part number IRFL1006, is a N-Channel SMD electronic component.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 1.6A (Ta) @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 220 mOhm @ 1.6A, 10V
  • Package: SOT-223
  • Status: obsolete(EOL) with limited supply and demand status
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Power Dissipation: 1W (Ta)

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2520 $62.6000
115+ $1.0268 $118.0820
175+ $0.9956 $174.2300
240+ $0.9633 $231.1920
315+ $0.9309 $293.2335
415+ $0.8351 $346.5665
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