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Same model may have multiple batches, images only for reference.
IRFP3703PBF Real Image
Same model may have multiple batches, images only for reference.

IRFP3703PBF

Part No IRFP3703PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 210A TO-247AC
Datasheet
IRFP3703PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 209nC @ 10V
Max Input Capacitance 8250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 230W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 76A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 133449-IRFP3703PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFP3703PBF CAD Model

Description

The Infineon Technologies IRFP3703PBF is a N-Channel MOSFET transistor that is designed for use in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 210A (Tc) @ 25°C
  • Power Dissipation: 3.8W (Ta), 230W (Tc)
  • Drive Voltage: 7V, 10V (Max Rds On, Min Rds On)
  • Technology: Through Hole
  • Packaging: Bulk
  • Operating Temperature: -55°C to 175°C (TJ)
  • Case/Package: TO-247AC, TO-247-3
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 209nC @ 10V
  • Maximum Input Capacitance: 8250pF @ 25V
  • Maximum Gate-Source Voltage: ±20V

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